View SPB11N60C3_3288458.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

2007-12-14 rev. 2.6 page 1 SPB11N60C3 cool mos? power transistor v ds @ t j max 650 v r ds ( on ) 0.38 ? i d 11 a feature ? new revolutionary high voltage technology ? ultra low gate charge ? periodic avalanche rated ? extreme d v /d t rated ? high peak current capability ? improved transconductance pg-to263 marking 11n60c3 type package ordering code SPB11N60C3 p g-to263 q67040-s4396 maximum ratings parameter symbol value unit continuous drain current t c = 25 c t c = 100 c i d 11 7 a pulsed drain current, t p limited by t j max i d p uls 33 a avalanche energy, single pulse i d =5.5a, v dd =50v e as 340 mj avalanche energy, repetitive t ar limited by t jmax 2) i d =11a, v dd =50v e ar 0.6 avalanche current, repetitive t a r limited by t j max i a r 11 a gate source voltage static v gs 20 v gate source voltage ac (f >1hz) v gs 30 power dissipation, t c = 25c p tot 125 w spb operating and storage temperature t j , t st g -55...+150 c reverse diode dv/dt dv/dt 15 v/ns 7)
20 07-12-14 rev. 2.6 page 2 SPB11N60C3 maximum ratings parameter symbol value unit drain source voltage slope v ds = 480 v, i d = 11 a, t j = 125 c d v /d t 50 v/ns thermal characteristics parameter symbol values unit min. typ. max. thermal resistance, junction - case r thjc - - 1 k/w - - thermal resistance, junction - ambient, leaded r thja - - 62 - - smd version, device on pcb: @ min. footprint @ 6 cm 2 cooling area 3) r thja - - - 35 62 - soldering temperature, reflow soldering, msl1 1.6 mm (0.063 in.) from case for 10s t sold - - 260 c electrical characteristics, at t j =25c unless otherwise specified parameter symbol conditions values unit min. typ. max. drain-source breakdown voltage v (br)dss v gs =0v, i d =0.25ma 600 - - v drain-source avalanche breakdown voltage v (br)ds v gs =0v, i d =11a - 700 - gate threshold voltage v gs ( th ) i d =500 a, v gs =v ds 2.1 3 3.9 zero gate voltage drain current i dss v ds =600v, v gs =0v, t j =25c t j =150c - - 0.1 - 1 100 a gate-source leakage current i gss v gs =30v, v ds =0v - - 100 na drain-source on-state resistance r ds(on) v gs =10v, i d =7a t j =25c t j =150c - - 0.34 0.92 0.38 - ? gate input resistance r g f =1mhz, open drain - 0.86 -
2007-12-14 rev. 2.6 page 3 SPB11N60C3 electrical characteristics parameter symbol conditions values unit min. typ. max. transconductance g fs v ds 2* i d * r ds(on)max , i d =7a - 8.3 - s input capacitance c iss v gs =0v, v ds =25v, f =1mhz - 1200 - pf output capacitance c oss - 390 - reverse transfer capacitance c rss - 30 - effective output capacitance, 5) energy related c o(er) v gs =0v, v ds =0v to 480v - 45 - effective output capacitance, 6) time related c o(tr) - 85 - turn-on delay time t d(on) v dd =380v, v gs =0/10v, i d =11a, r g =6.8 ? - 10 - ns rise time t r - 5 - turn-off delay time t d(off) - 44 70 fall time t f - 5 9 gate charge characteristics gate to source charge q gs v dd =480v, i d =11a - 5.5 - nc gate to drain charge q gd - 22 - gate charge total q g v dd =480v, i d =11a, v gs =0 to 10v - 45 60 gate plateau voltage v ( plateau ) v dd =480v, i d =11a - 5.5 - v 1 limited only by maximum temperature 2 repetitve avalanche causes additional power losses that can be calculated as p av = e ar * f . 3 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical without blown air. 4 c o(er) is a fixed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 80% v dss . 5 c o(tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . 6 i sd <=i d , di/dt<=400a/us, v dclink =400v, v peak 2007-12-14 rev. 2.6 page 4 SPB11N60C3 electrical characteristics parameter symbol conditions values unit min. typ. max. inverse diode continuous forward current i s t c =25c - - 11 a inverse diode direct current, pulsed i sm - - 33 inverse diode forward voltage v sd v gs =0v, i f = i s - 1 1.2 v reverse recovery time t rr v r =480v, i f = i s , d i f /d t =100a/s - 400 600 ns reverse recovery charge q rr - 6 - c peak reverse recovery current i rrm - 41 - a peak rate of fall of reverse recovery current di rr /dt t j =25c - 1200 - a/s typical transient thermal characteristics symbol value unit symbol value unit r th1 0.015 k/w c th1 0.0001878 ws/k r th2 0.03 c th2 0.0007106 r th3 0.056 c th3 0.000988 r th4 0.197 c th4 0.002791 r th5 0.216 c th5 0.007285 r th6 0.083 c th6 0.063 spb spb external heatsink t j t case t amb c th1 c th2 r th1 r th,n c th,n p tot (t)
20 07-12-14 rev. 2.6 page 5 SPB11N60C3 1 power dissipation p tot = f ( t c ) 0 20 40 60 80 100 120 c 160 t c 0 10 20 30 40 50 60 70 80 90 100 110 120 w 140 spp11n60c3 p tot 2 power dissipation fullpak p tot = f ( t c ) 0 20 40 60 80 100 120 c 160 t c 0 5 10 15 20 25 w 35 p tot 3 safe operating area i d = f ( v ds ) parameter : d = 0 , t c =25c 10 0 10 1 10 2 10 3 v v ds -2 10 -1 10 0 10 1 10 2 10 a i d tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms dc 4 safe operating area fullpak i d = f ( v ds ) parameter: d = 0, t c = 25c 10 0 10 1 10 2 10 3 v v ds -2 10 -1 10 0 10 1 10 2 10 a i d tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms dc
2007-12-14 rev. 2.6 page 6 SPB11N60C3 5 transient thermal impedance z thjc = f ( t p ) parameter: d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -1 s t p -4 10 -3 10 -2 10 -1 10 0 10 1 10 k/w z thjc d = 0.5 d = 0.2 d = 0.1 d = 0.05 d = 0.02 d = 0.01 single pulse 6 transient thermal impedance fullpak z thjc = f ( t p ) parameter: d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 s t p -4 10 -3 10 -2 10 -1 10 0 10 1 10 k/w z thjc d = 0.5 d = 0.2 d = 0.1 d = 0.05 d = 0.02 d = 0.01 single pulse 7 typ. output characteristic i d = f ( v ds ); t j =25c parameter: t p = 10 s, v gs 0 3 6 9 12 15 18 21 v 27 v ds 0 4 8 12 16 20 24 28 32 a 40 i d 4,5v 5v 5,5v 6v 6,5v 7v 20v 10v 8v 8 typ. output characteristic i d = f ( v ds ); t j =150c parameter: t p = 10 s, v gs 0 5 10 15 v 25 v ds 0 2 4 6 8 10 12 14 16 18 a 22 i d 4v 4.5v 5v 5.5v 6v 20v 8v 7v 7.5v
2007-12-14 rev. 2.6 page 7 SPB11N60C3 9 typ. drain-source on resistance r ds(on) = f ( i d ) parameter: t j =150c, v gs 0 2 4 6 8 10 12 14 16 a 20 i d 0.4 0.6 0.8 1 1.2 1.4 1.6 ? 2 r ds(on) 4v 4.5v 5v 5.5v 6v 6.5v 8v 20v 10 drain-source on-state resistance r ds(on) = f ( t j ) parameter : i d = 7 a, v gs = 10 v -60 -20 20 60 100 c 180 t j 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 ? 2.1 spp11n60c3 r ds(on) typ 98% 11 typ. transfer characteristics i d = f ( v gs ); v ds 2 x i d x r ds(on)max parameter: t p = 10 s 0 2 4 6 8 10 12 v 15 v gs 0 4 8 12 16 20 24 28 32 a 40 i d 25c 150c 12 typ. gate charge v gs = f ( q gate ) parameter: i d = 11 a pulsed 0 10 20 30 40 50 nc 70 q gate 0 2 4 6 8 10 12 v 16 spp11n60c3 v gs 0,8 v ds max ds max v 0,2
2007-12-14 rev. 2.6 page 8 SPB11N60C3 13 forward characteristics of body diode i f = f (v sd ) parameter: t j , t p = 10 s 0 0.4 0.8 1.2 1.6 2 2.4 v 3 v sd -1 10 0 10 1 10 2 10 a spp11n60c3 i f t j = 25 c typ t j = 25 c (98%) t j = 150 c typ t j = 150 c (98%) 14 typ. switching time t = f ( i d ), inductive load, t j =125c par.: v ds =380v, v gs =0/+13v, r g =6.8 ? 0 2 4 6 8 a 12 i d 0 5 10 15 20 25 30 35 40 45 50 55 60 ns 70 t tr td(off) td(on) tf 15 typ. switching time t = f ( r g ), inductive load, t j =125c par.: v ds =380v, v gs =0/+13v, i d =11 a 0 10 20 30 40 50 ? 70 r g 0 50 100 150 200 250 ns 350 t td(off) td(on) tr tf 16 typ. drain current slope d i /d t = f( r g ), inductive load, t j = 125c par.: v ds =380v, v gs =0/+13v, i d =11a 0 20 40 60 80 ? 120 r g 0 500 1000 1500 2000 a/s 3000 d i /d t di/dt(on) di/dt(off)
2007-12-14 rev. 2.6 page 9 SPB11N60C3 17 typ. drain source voltage slope d v /d t = f( r g ), inductive load, t j = 125c par.: v ds =380v, v gs =0/+13v, i d =11a 0 10 20 30 40 50 ? 70 r g 10 20 30 40 50 60 70 80 90 100 110 120 v/ns 140 d v /d t dv/dt(off) dv/dt(on) 18 typ. switching losses e = f ( i d ), inductive load, t j =125c par.: v ds =380v, v gs =0/+13v, r g =6.8 ? 0 2 4 6 8 a 12 i d 0 0.005 0.01 0.015 0.02 0.025 0.03 mws 0.04 e eon* eoff *) eon includes spd06s60 diode commutation losses 19 typ. switching losses e = f ( r g ), inductive load, t j =125c par.: v ds =380v, v gs =0/+13v, i d =11a 0 10 20 30 40 50 ? 70 r g 0 0.04 0.08 0.12 0.16 mws 0.24 e eon* eoff *) eon includes spd06s60 diode commutation losses 20 avalanche soa i ar = f ( t ar ) par.: t j 150 c 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 s t ar 0 1 2 3 4 5 6 7 8 9 a 11 i ar t j (start) =125c t j (start) =25c
2007-12-14 rev. 2.6 page 10 SPB11N60C3 21 avalanche energy e as = f ( t j ) par.: i d = 5.5 a, v dd = 50 v 20 40 60 80 100 120 c 160 t j 0 50 100 150 200 250 mj 350 e as 23 avalanche power losses p ar = f ( f ) parameter: e ar =0.6mj 10 4 10 5 10 6 hz f 0 50 100 150 200 w 300 p ar 22 drain-source breakdown voltage v (br)dss = f ( t j ) -60 -20 20 60 100 c 180 t j 540 560 580 600 620 640 660 680 v 720 spp11n60c3 v (br)dss 24 typ. capacitances c = f ( v ds ) parameter: v gs =0v, f =1 mhz 0 100 200 300 400 v 600 v ds 0 10 1 10 2 10 3 10 4 10 pf c c iss c oss c rss
2007 -12-14 rev. 2.6 page 11 SPB11N60C3 25 typ. c oss stored energy e oss = f ( v ds ) 0 100 200 300 400 v 600 v ds 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 j 7.5 e oss definition of diodes switching characteristics
2007 -12-14 rev. 2.6 page 12 SPB11N60C3 pg-to263
2007-12-14 rev. 2.6 page 13 published by infineon technologies ag 81726 munich, germany ? 2007 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non- infringement of intellectual property rights of any third party. information for further information on technology, deliver y terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon techno logies, if a failure of such components can reasonably be expected to cause the failure of th at life-support device or system or to affect the safety or effectiven ess of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is re asonable to assume that the health of the user or other persons may be endangered. SPB11N60C3

▲Up To Search▲

Price & Availability of SPB11N60C3

	To Download SPB11N60C3 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .